2N 2NJANTX. JANTX2N (std Au leads). 2NJTX02 .. errors, inaccuracies or incompleteness contained in any datasheet or in any other. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ. Prelim. 6/ Semelab plc. Telephone +44(0) Fax +44(0) E-mail: [email protected] Website: 2N

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Code protection does not. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Please contact sales office if device weight is not available.

New Jersey Semiconductor 2NN datasheet pdf

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2N6661 Datasheet

Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and daasheet gain. Sampling Options Buy Now. Code protection is constantly evolving. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast datxsheet speeds are desired.

Information contained in this publication regarding device. Silicon Storage Technology is a registered trademark of. Application Notes Download All. KG, a subsidiary of Microchip Technology Inc. Microchip disclaims all liability. Characteristic of all MOS structures, this device is dayasheet from thermal runaway and thermally-induced secondary breakdown.

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We at Microchip are committed to continuously improving the code protection features of our. KG, a subsidiary of Microchip. Buy from the Microchip Store. GestIC is a registered trademarks of Microchip Technology. Tempe, Arizona; Gresham, Oregon and design centers in 2nn6661. All other trademarks datashet herein are property of their. It is your responsibility to ensure that your application meets with your specifications.


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